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PD - 95968
IRGP50B60PDPBF
SMPS IGBT
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
C
Applications
* * * * * Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead- Free
VCES = 600V VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A
G E
Features
* * * * * * * NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability
n-channel
Equivalent MOSFET Parameters RCE(on) typ. = 61m ID (FET equivalent) = 50A
E C G
Benefits
* Parallel Operation for Higher Current Applications * Lower Conduction Losses and Switching Losses * Higher Switching Frequency up to 150kHz
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFRM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref. Fig. C.T.4) Clamped Inductive Load Current
Max.
600 75 42 150 150 50 25 100 20 370 150 -55 to +150
Units
V
d
A
Diode Continous Forward Current Diode Continous Forward Current Maximum Repetitive Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature for 10 sec. Mounting Torque, 6-32 or M3 Screw
e
V W
C 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Thermal Resistance
Parameter
RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Weight
Min.
--- --- --- --- ---
Typ.
--- --- 0.50 --- 6.0 (0.21)
Max.
0.34 0.64 --- 40 ---
Units
C/W
g (oz)
12/1/04
1
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IRGP50B60PDPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
600 -- -- -- -- -- --
Typ.
-- 0.61 1.2 2.0 2.4 2.6 3.2 4.0 -7.07 42 5.0 1.0 1.3 1.5 1.3 --
Max. Units
-- -- -- 2.2 2.6 2.9 3.6 5.0 -- -- 500 -- 1.7 2.0 1.7 100 nA V V V
Conditions
VGE = 0V, IC = 500A 1MHz, Open Collector IC = 33A, VGE = 15V IC = 50A, VGE = 15V IC = 33A, VGE = 15V, TJ = 125C IC = 50A, VGE = 15V, TJ = 125C
Ref.Fig
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
V/C VGE = 0V, IC = 1mA (25C-125C)
4, 5,6,8,9
RG VCE(on)
Internal Gate Resistance Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current
3.0 -- -- -- -- --
gfe ICES
IC = 250A V mV/C VCE = VGE, IC = 1.0mA S VCE = 50V, IC = 33A, PW = 80s A mA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 125C IF = 25A, VGE = 0V IF = 50A, VGE = 0V IF = 25A, VGE = 0V, TJ = 125C VGE = 20V, VCE = 0V
7,8,9
VFM IGES
Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
-- -- --
10
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qgc Qge Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Coes eff. Coes eff. (ER) RBSOA trr Qrr Irr Total Gate Charge (turn-on) Gate-to-Collector Charge (turn-on) Gate-to-Emitter Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Time Related)
Min.
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ.
240 41 84 360 380 740 34 26 130 43 610 460 1070 33 26 140 50 4750 390 58 280 190
Max. Units
360 82 130 590 420 960 44 36 140 56 880 530 1410 43 36 160 65 -- -- -- -- -- pF VGE = 0V VCC = 30V ns J ns J nC IC = 33A VCC = 400V VGE = 15V
Conditions
Ref.Fig 17 CT1
IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 210H TJ = 25C
CT3
fAA
IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 210H TJ = 25C
CT3
fAA f
IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 210H TJ = 125C IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 200H TJ = 125CAfAA
CT3 11,13 WF1,WF2 CT3 12,14 WF1,WF2
16
g
--
Effective Output Capacitance (Energy Related) Reverse Bias Safe Operating Area Diode Reverse Recovery Time Diode Reverse Recovery Charge Peak Reverse Recovery Current
g
-- --
f = 1Mhz VGE = 0V, VCE = 0V to 480V TJ = 150C, IC = 150A
15
3 CT2
FULL SQUARE -- -- -- -- -- -- 50 105 112 420 4.5 8.0 75 160 375 4200 10 15 A nC ns
VCC = 480V, Vp =600V Rg = 22, VGE = +15V to 0V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C IF = 25A, VR = 200V, di/dt = 200A/s IF = 25A, VR = 200V, di/dt = 200A/s IF = 25A, VR = 200V, di/dt = 200A/s
19
21
19,20,21,22
Notes:
CT5
RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 20V, L = 28 H, RG = 22 . Pulse width limited by max. junction temperature. Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06. Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
2
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IRGP50B60PDPBF
80 70
IC, Collector Current (A)
400
Limited by package
350 300 250
60 50 40 30 20 10 0 25 50 75 100 125 150 T C, Case Temperature (C)
Ptot (W)
200 150 100 50 0 0 20 40 60 80 100 120 140 160 T C (C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
1000
Fig. 2 - Power Dissipation vs. Case Temperature
320 280 240 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
100
200
ICE (A)
10 1 10 100 VCE (V) 1000
IC A)
160 120 80 40 0 0 2 4 6 8 10 VCE (V)
Fig. 3 - Reverse Bias SOA TJ = 150C; VGE =15V
320 280 240 200 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 320 280 240 200
Fig. 4 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
ICE (A)
160 120 80 40 0 0 2 4 6 8 10 VCE (V)
ICE (A)
160 120 80 40 0 0 2 4 6 8 10 12 14 16 18 20 VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 125C; tp = 80s
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3
IRGP50B60PDPBF
600 500 400 T J = 25C T J = 125C 25
20
VCE (V)
ICE (A)
15
ICE = 15A ICE = 33A ICE = 50A
300 200 T J = 125C 100 T J = 25C 0 0 5 10 VGE (V) 15 20
10
5
0 0 5 10 VGE (V) 15 20
Fig. 7 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
25
100
Fig. 8 - Typical VCE vs. VGE TJ = 25C
20
Instantaneous Forward Current - IF (A)
T = 150C J T = 125C J T=
10 J
VCE (V)
15
ICE = 15A ICE = 33A ICE = 50A
25C
10
5
0 0 5 10 VGE (V) 15 20
1 0.6
A 1.0 1.4 1.8 2.2 2.6
Forward Voltage Drop - V FM (V)
Fig. 9 - Typical VCE vs. VGE TJ = 125C
1800 1600 1400 EON 1000
Fig. 10 - Maximum. Diode Forward Characteristics tp = 80s
Energy (J)
1200 1000 800 600 400 200 10 20 30 40 IC (A) 50 60 70 EOFF
Swiching Time (ns)
tdOFF 100 tF tdON tR 10 0 10 20 30 40 50 60 70 IC (A)
Fig. 11 - Typ. Energy Loss vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3)
Fig. 12 - Typ. Switching Time vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3)
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IRGP50B60PDPBF
1800 1600 1400 1000
EOFF
Energy (J)
1200 1000 800
Swiching Time (ns)
td OFF
100
EON
600 400 200 0 10 20 30 40
tF tdON tR
10 0 10 20 30 40
RG ()
RG ()
Fig. 13 - Typ. Energy Loss vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 33A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3)
35 30 25
Fig. 14 - Typ. Switching Time vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 33A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3)
10000
Cies
Capacitance (pF)
1000
Eoes (J)
20 15 10 5 0 0 100 200 300 400 500 600 700
Coes
100
Cres
10 0 100 200 300 400 500
Voltage (V)
VCE (V)
Fig. 15- Typ. Output Capacitance Stored Energy vs. VCE
16
VGE, Gate-to-Emitter Voltage (V)
Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
1.5
14 12 10 8 6 4 2 0 0 50 100
VCE = 480V
Normalized VCE(on)
150 200 250 300 Q G, Total Gate Charge (nC)
1.3
1.0
0.8
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C (C)
Fig. 17 - Typical Gate Charge vs. VGE ICE = 33A
Fig. 18 - Normalized Typ. VCE(on) vs. Junction Temperature IC = 33A, VGE= 15V
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IRGP50B60PDPBF
140 VR = 200V TJ = 125C TJ = 25C 120 25 30 VR = 200V TJ = 125C TJ = 25C
100
20
I F = 50A I F = 25A
trr- (nC)
Irr- ( A)
80
I F = 50A I F = 25A IF = 10A
I F = 10A
15
60
10
40
5
20 100
A
di f /dt - (A/s)
1000
0 100
A
di f /dt - (A/s)
1000
Fig. 19 - Typical Reverse Recovery vs. dif/dt
Fig. 20 - Typical Recovery Current vs. dif/dt
1400 VR = 200V TJ = 125C TJ = 25C
10000 VR = 200V TJ = 125C TJ = 25C
1200
1000
I F = 50A I F = 25A I F = 10A
Qrr- (nC)
800
di (rec) M/dt- (A /s)
1000
I F = 50A I F = 25A I F = 10A
600
400
200
A 0 100
di f /dt - (A/s)
1000
100 100
A
di f /dt - (A/s)
1000
Fig. 21 - Typical Stored Charge vs. dif/dt
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
6
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IRGP50B60PDPBF
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
0.01
0.02 0.01
J
R1 R1 J 1 2
R2 R2 C
Ri (C/W) i (sec) 0.0789 0.000277 0.2614 0.040918
1
2
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci= i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 0.01 0.1 1
0.0001 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20 0.10 0.05
0.01
R1 R1 J 1 2 R2 R2 R3 R3 3 C 3
0.02 0.01
J
Ri (C/W) i (sec) 0.0733 0.000420 0.1301 0.1358 0.002274 0.023026
1
2
Ci= i/Ri Ci= i/Ri
0.001
SINGLE PULSE ( THERMAL RESPONSE )
0.0001 1E-006 1E-005 0.0001 0.001 0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
1000 OPERATION IN THIS AREA LIMITED BY V CE(on)
ID, Drain-to-Source Current (A)
100
100sec 1msec
10
10msec
1
100msec
0.1
Tc = 25C Tj = 150C Single Pulse 1 10 100 1000
0.01 VDS, Drain-to-Source Voltage (V)
Fig. 25 - Forward SOA, TC = 25C; TJ 150C
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7
IRGP50B60PDPBF
L
L DUT
0
VCC
80 V Rg
DUT
480V
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
PFC diode
L
R=
VCC ICM
DUT / DRIVER
Rg
VCC
Rg
DUT
VCC
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Resistive Load Circuit
REVERSE RECOVERY CIRCUIT
VR = 200V
0.01 L = 70H D.U.T. D G IRFP250 S
dif/dt ADJUST
Fig. C.T.5 - Reverse Recovery Parameter Test Circuit
8
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IRGP50B60PDPBF
700 600 500 90% Ice 400 Vce (V) 300 5% Vce 200 5% Ice 100 0 Eoff Loss -100 -0.05 0 0.05 Time (uS) 0.1 -5 0.15 5 0 10 20 Ice (A) tf Vce 25 35 30
700 tr 600 Vce 500 90% Ice 400 Vce (V) 300 10% Ice 200 100 0 Eon Loss -100 3.95 4.05 4.15 Time (uS) 5% Vce Ice
70 60 50 40 30 20 10 0 -10 4.25 Ice (A)
Ice
15
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 25C using Fig. CT.3
Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 25C using Fig. CT.3
3
IF 0
trr ta tb
4
Q rr
2
I RRM
0.5 I RRM di(rec)M/dt 0.75 I RRM
5
1
di f /dt
4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M /dt - Peak rate of change of current during tb portion of trr
1. dif/dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current
Fig. WF3 - Reverse Recovery Waveform and Definitions
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9
IRGP50B60PDPBF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30 WIT H ASS EMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line position indicates "Lead-Free"
PART NUMBER INTERNATIONAL RECTIFIER LOGO ASS EMBLY LOT CODE
IRFPE30
56 035H 57
DATE CODE YEAR 0 = 2000 WEEK 35 LINE H
TO-247AC package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04
10
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